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| STN888 HIGH CURRENT, HIGH PERFORMANCE, LOW VOLTAGE PNP TRANSISTOR Features VERY LOW COLLECTOR TO EMITTER SATURATION VOLTAGE D.C. CURRENT GAING, hFE > 100 5 A CONTINUOUS COLLECTOR CURRENT SOT-223 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS AVAILABLE IN TAPE & REEL PACKING IN COMPLIANCE WITH THE 2002/93/EC EUROPEAN DIRECTIVE 1 2 2 3 SOT-223 Applications POWER MANAGEMENT IN PORTABLE EQUIPMENT VOLTAGE REGULATION IN BIAS SUPPLY CIRCUITS SWITCHING REGULATOR IN BATTERY CHARGER APPLICATIONS HEAVY LOAD DRIVER Internal Schematic Diagram Description The device is manufactured in low voltage PNP Planar Technology by using a "Base Island" layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Order Codes Part Number STN888 Marking N888 Package SOT-223 Packing Tape & Reel August 2005 rev.2 1/9 www.st.com 9 1 Absolute Maximum Ratings STN888 1 Table 1. Symbol VCBO VCEO VEBO IC ICM PTOT Tstg TJ Absolute Maximum Ratings Absolute Maximum Rating Parameter Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tP < 5ms) Total dissipation at Tc = 25C Storage Temperature Max. Operating Junction Temperature Value -45 -30 -6 -5 -10 1.6 -65 to 150 150 Unit V V V A A W C C Table 2. Symbol Rthj-amb Thermal Data Parameter Thermal Resistance Junction-Ambient__________________Max Value 78 Unit C/W 2/9 STN888 2 Electrical Characteristics 2 Electrical Characteristics (TCASE = 25C; unless otherwise specified) Table 3. Symbol ICBO IEBO Electrical Characteristics Parameter Collector Cut-off Current (IE = 0) Emitter Cut-off Current (IC = 0) Test Conditions VCB = -30V VCB = -30V VEB = -6V IC = -10mA IC = -100A IE = -100A IC = -500mA_____ IC = -2A_____ IB = -5mA IB = -50mA IB = -250mA ____ IB = -250mA IB = -400mA __ IB = -500mA IB = -50mA IB = -250mA VCE = -1 V 120 VCE = -1 V 100 VCE = -1 V 70 VCE = -1 V tj = 100C VCE = -1 V VCE = -1 V VCC = -20V -1.2 200 200 100 100 55 35 300 -0.7 -1.0 -1.2 -1.1 -30 -45 -6 -0.15 -0.35 -0.70 ____TC = 100C Min. Typ. Max. -10 -100 -10 Unit A A A V V V V(BR)CEO Collector-Emitter Note: 1 Breakdown Voltage (IB = 0) V(BR)CBO V(BR)EBO Collector-Base Breakdown Voltage (IE = 0) Emitter-Base Breakdown Voltage (IC = 0) VCE(sat) Note: 1 Collector-Emitter Saturation Voltage IC = -5A_____ IC = -6A_ IC = -8A _____ IC = -10A ___ IC = -2A ____ IC = -6A ____ IC = -10mA IC = -500mA V V V V V V V V VBE(sat) Note: 1 Base-Emitter Saturation Voltage hFE Note: 1 DC Current Gain IC = -5 A IC = -5 A IC = -8 A IC = -10 A td tr ts tf INDUCTIVE LOAD Delay Time Rise Time Storage Time Fall Time IC = -3A ____ _ IB1 = -IB2 =-60mA (see Figure 7) 180 160 250 80 220 210 300 100 ns ns ns ns Note: 1 Pulsed duration = 300 s, duty cycle 1.5%. 3/9 2 Electrical Characteristics STN888 2.1 Typical Characteristics DC Current Gain Figure 2. DC Current Gain Figure 1. Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter Saturation Voltage Figure 5. Switching Times Resistive Load Figure 6. Switching Times Resistive Load 4/9 STN888 3 Test Circuits 3 Figure 7. Test Circuits Resistive Load Switching Test Circuit 1) Fast Electronic Switching 2) Non-inductive Resisitor 5/9 4 Package Mechanical Data STN888 4 Package Mechanical Data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 6/9 STN888 4 Package Mechanical Data SOT-223 MECHANICAL DATA mm MIN. A B B1 c D e e1 E H V A1 0.02 3.30 6.70 0.60 2.90 0.24 6.30 0.70 3.00 0.26 6.50 2.30 4.60 3.50 7.00 3.70 7.30 10 o DIM. inch MAX. 1.80 0.80 3.10 0.32 6.70 0.024 0.114 0.009 0.248 0.027 0.118 0.010 0.256 0.090 0.181 0.130 0.264 0.138 0.276 0.146 0.287 10o MIN. TYP. MAX. 0.071 0.031 0.122 0.013 0.264 TYP. P008B 7/9 5 Revision History STN888 5 Revision History Date 03-Aug-2005 Revision 1 Initial release. Changes 8/9 STN888 5 Revision History Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners (c) 2005 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 9/9 |
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